发明授权
- 专利标题: Method for forming bottle trenches
- 专利标题(中): 瓶沟形成方法
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申请号: US10430874申请日: 2003-05-07
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公开(公告)号: US06716757B2公开(公告)日: 2004-04-06
- 发明人: Shian-Jyh Lin , Chao-Sung Lai
- 申请人: Shian-Jyh Lin , Chao-Sung Lai
- 优先权: TW91110271A 20020516
- 主分类号: H01L21762
- IPC分类号: H01L21762
摘要:
A method for forming bottle trenches. The method comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with protective layer on the upper portions of sidewalls thereof, implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon, and removing the bottle-shaped oxide layer.
公开/授权文献
- US20030216044A1 Method for forming bottle trenches 公开/授权日:2003-11-20