发明授权
- 专利标题: Semiconductor device and method for driving the same
- 专利标题(中): 半导体装置及其驱动方法
-
申请号: US09977310申请日: 2001-10-16
-
公开(公告)号: US06720596B2公开(公告)日: 2004-04-13
- 发明人: Takashi Ohtsuka , Kiyoyuki Morita , Michihito Ueda
- 申请人: Takashi Ohtsuka , Kiyoyuki Morita , Michihito Ueda
- 优先权: JP2000-316149 20001017
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
A nonvolatile semiconductor storage element, which is provided with a floating gate electrode, and a dielectric capacitor and a ferroelectric capacitor both connected to the floating gate electrode. By applying voltage between a first polarization voltage supplying terminal and a second polarization voltage supplying terminal, polarization serving as information is generated in the ferroelectric film of the ferroelectric capacitor. Additionally, when a read-out voltage is applied between the ground terminal and the power source voltage terminal that are in connection with the source and drain regions, the MISFET is turned either on or off in correspondence to the state of the charge held in the floating gate electrode, and thus information within the floating gate electrode is read out.
公开/授权文献
- US20020043676A1 Semiconductor device and method for driving the same 公开/授权日:2002-04-18