Invention Grant
- Patent Title: Voltage generator for semiconductor memory device
- Patent Title (中): 用于半导体存储器件的电压发生器
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Application No.: US10246083Application Date: 2002-09-18
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Publication No.: US06721211B2Publication Date: 2004-04-13
- Inventor: Jae Jin Lee , Kang Seol Lee
- Applicant: Jae Jin Lee , Kang Seol Lee
- Priority: KR2001-82256 20011221
- Main IPC: G11C700
- IPC: G11C700

Abstract:
A voltage generator for a semiconductor memory device that improves the drivability of an output driver by controlling a gate of the output driver to vary between an internal power supply voltage and a ground voltage, is disclosed. The voltage generator includes an output voltage controller to generate a pull-up signal for controlling a pull-up operation and a pull-down signal for controlling a pull-down operation, the pull-up signal having a level substantially equivalent to an internal power supply voltage if a cell plate voltage is higher than a cell plate reference voltage, and having a level below the cell plate voltage if the cell plate voltage is lower than the cell plate reference voltage. The voltage generator further includes an output driver to generate a stable cell plate voltage in response to the pull-up signal and the pull-down signal.
Public/Granted literature
- US20030117857A1 Voltage generator for semiconductor memory device Public/Granted day:2003-06-26
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