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US06721211B2 Voltage generator for semiconductor memory device 失效
用于半导体存储器件的电压发生器

  • Patent Title: Voltage generator for semiconductor memory device
  • Patent Title (中): 用于半导体存储器件的电压发生器
  • Application No.: US10246083
    Application Date: 2002-09-18
  • Publication No.: US06721211B2
    Publication Date: 2004-04-13
  • Inventor: Jae Jin LeeKang Seol Lee
  • Applicant: Jae Jin LeeKang Seol Lee
  • Priority: KR2001-82256 20011221
  • Main IPC: G11C700
  • IPC: G11C700
Voltage generator for semiconductor memory device
Abstract:
A voltage generator for a semiconductor memory device that improves the drivability of an output driver by controlling a gate of the output driver to vary between an internal power supply voltage and a ground voltage, is disclosed. The voltage generator includes an output voltage controller to generate a pull-up signal for controlling a pull-up operation and a pull-down signal for controlling a pull-down operation, the pull-up signal having a level substantially equivalent to an internal power supply voltage if a cell plate voltage is higher than a cell plate reference voltage, and having a level below the cell plate voltage if the cell plate voltage is lower than the cell plate reference voltage. The voltage generator further includes an output driver to generate a stable cell plate voltage in response to the pull-up signal and the pull-down signal.
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