Invention Grant
- Patent Title: Semiconductor device comprising layered positional detection marks and manufacturing method thereof
- Patent Title (中): 包括分层位置检测标记的半导体器件及其制造方法
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Application No.: US10003307Application Date: 2001-12-06
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Publication No.: US06723614B2Publication Date: 2004-04-20
- Inventor: Masao Sugiyama
- Applicant: Masao Sugiyama
- Priority: JP10-175003 19980622
- Main IPC: H01L2176
- IPC: H01L2176

Abstract:
A semiconductor device that permits effective use of a region positioned under a positional detection mark or an external electrode, i.e., the region that has not been conventionally utilized may be provided. In a semiconductor device including a lower layer, a shielding film and an upper layer, the lower layer includes at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element. The shielding film is formed on the lower layer and shields an energy beam used for detecting a positional detection mark. The upper layer includes a positional detection mark formed on the shielding film.
Public/Granted literature
- US20020036357A1 Semiconductor device comprising layered positional detection marks and manufacturing method thereof Public/Granted day:2002-03-28
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