Invention Grant
US06723614B2 Semiconductor device comprising layered positional detection marks and manufacturing method thereof 失效
包括分层位置检测标记的半导体器件及其制造方法

  • Patent Title: Semiconductor device comprising layered positional detection marks and manufacturing method thereof
  • Patent Title (中): 包括分层位置检测标记的半导体器件及其制造方法
  • Application No.: US10003307
    Application Date: 2001-12-06
  • Publication No.: US06723614B2
    Publication Date: 2004-04-20
  • Inventor: Masao Sugiyama
  • Applicant: Masao Sugiyama
  • Priority: JP10-175003 19980622
  • Main IPC: H01L2176
  • IPC: H01L2176
Semiconductor device comprising layered positional detection marks and manufacturing method thereof
Abstract:
A semiconductor device that permits effective use of a region positioned under a positional detection mark or an external electrode, i.e., the region that has not been conventionally utilized may be provided. In a semiconductor device including a lower layer, a shielding film and an upper layer, the lower layer includes at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element. The shielding film is formed on the lower layer and shields an energy beam used for detecting a positional detection mark. The upper layer includes a positional detection mark formed on the shielding film.
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