Invention Grant
- Patent Title: Faraday system for ion implanters
- Patent Title (中): 法拉第系统用于离子注入机
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Application No.: US09950940Application Date: 2001-09-12
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Publication No.: US06723998B2Publication Date: 2004-04-20
- Inventor: Jack Bisson , Zhiyong Zhao , George Gammel , Daniel Alvarado , Craig Walker
- Applicant: Jack Bisson , Zhiyong Zhao , George Gammel , Daniel Alvarado , Craig Walker
- Main IPC: G01K100
- IPC: G01K100

Abstract:
A Faraday system for measuring ion beam current in an ion implanter or other ion beam treatment system includes a Faraday cup body defining a chamber which has an entrance aperture for receiving an ion beam, a suppression electrode positioned in proximity to the entrance aperture to produce electric fields for inhibiting escape of electrons from the chamber, and a magnet assembly positioned to produce magnetic fields for inhibiting escape of electrons from the chamber. The chamber may have a relatively small ratio of chamber depth to entrance aperture width.
Public/Granted literature
- US20020070347A1 Faraday system for ion implanters Public/Granted day:2002-06-13
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