Invention Grant
- Patent Title: Probe structure for testing semiconductor devices and method for fabricating the same
- Patent Title (中): 用于测试半导体器件的探针结构及其制造方法
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Application No.: US10125248Application Date: 2002-04-18
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Publication No.: US06724204B2Publication Date: 2004-04-20
- Inventor: Dong-il Cho , Sangjun Park
- Applicant: Dong-il Cho , Sangjun Park
- Priority: KR2001-20840 20010418
- Main IPC: G01R3102
- IPC: G01R3102

Abstract:
Disclosed are a probe structure for testing semiconductor devices and a method for fabricating the probe structure. The fabricated probe structure of the present invention satisfies the high density, the uniformity of size, height and spacing, and the integration of elements. The probe structure of the present invention solves the conventional problems such as long fabrication time of the probe structure, difficulty in finely controlling the structure of the probe structure, complexity of the whole process, mechanical instability of the products, and difficulty in uniformly assembling a plurality of the probe structures. Additionally, the probe structure of the present invention solves several problems caused in an actual testing step of the semiconductor devices, for instance, long testing time of the semiconductor device, difficulty in providing the sufficient contact force between the probe structure and the semiconductor device, and having to specially design the test pads of the semiconductor device.
Public/Granted literature
- US20020153911A1 Probe structure for testing semiconductor devices and method for fabricating the same Public/Granted day:2002-10-24
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