发明授权
- 专利标题： Semiconductor power conversion apparatus
- 专利标题（中）： 半导体电力转换装置
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申请号： US10095102申请日： 2002-03-12
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公开(公告)号： US06727516B2公开(公告)日： 2004-04-27
- 发明人: Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
- 申请人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
- 优先权： JP2001-259120 20010829
- 主分类号： H01L2940
- IPC分类号： H01L2940
摘要：
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
公开/授权文献
- US20030045041A1 Semiconductor power conversion apparatus 公开/授权日：2003-03-06