Invention Grant
US06727637B2 Buffered resist profile etch of a field emission device structure
失效
场发射器件结构的缓冲抗蚀剂轮廓蚀刻
- Patent Title: Buffered resist profile etch of a field emission device structure
- Patent Title (中): 场发射器件结构的缓冲抗蚀剂轮廓蚀刻
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Application No.: US09761375Application Date: 2001-01-16
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Publication No.: US06727637B2Publication Date: 2004-04-27
- Inventor: Terry N. Williams
- Applicant: Terry N. Williams
- Main IPC: H01J146
- IPC: H01J146

Abstract:
A field emission device comprises an emitter tip that is optionally formed from and integral with an emitter layer. The emitter tip has a base, an apex, and an exterior surface having a profile between the base and the apex. The profile has a continuous shape that extends from the base to the apex. The devices may be part of a flat panel display device that also includes a substrate, a cathode conductive layer disposed over the substrate, an array of emitter tips each formed from an emitter layer disposed over the substrate, a conductive gate structure disposed over the cathode conductive layer, an array of apertures formed through the conductive gate structure, and an anode panel for emitting light in response to electrons emitted from the array of emitter tips.
Public/Granted literature
- US20010005110A1 Buffered resist profile etch of a field emission device structure Public/Granted day:2001-06-28
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