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US06727787B2 Method and device for achieving a high-Q microwave resonant cavity 有权
实现高Q微波谐振腔的方法和装置

  • Patent Title: Method and device for achieving a high-Q microwave resonant cavity
  • Patent Title (中): 实现高Q微波谐振腔的方法和装置
  • Application No.: US10036859
    Application Date: 2001-12-21
  • Publication No.: US06727787B2
    Publication Date: 2004-04-27
  • Inventor: Thomas M. Worth , Kaplesh Kumar
  • Applicant: Thomas M. Worth , Kaplesh Kumar
  • Main IPC: H01P700
  • IPC: H01P700
Method and device for achieving a high-Q microwave resonant cavity
Abstract:
A device for manipulating microwave radiation includes a substrate that defines the shape of a surface for reflecting microwave radiation. The device also includes a metal fitting. The fitting conforms to the defined shape, and provides the surface that reflects microwave radiation.
Abstract(Chinese):

用于操纵微波辐射的装置包括限定用于反射微波辐射的表面的形状的基板。 该装置还包括金属配件。 配件符合规定的形状，并提供反映微波辐射的表面。

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