Method of dry etching a semiconductor device in the absence of a plasma

发明授权

US06730600B2 Method of dry etching a semiconductor device in the absence of a plasma 有权

标题翻译：在不存在等离子体的情况下干法蚀刻半导体器件的方法

请登陆查看更多内容

专利标题： Method of dry etching a semiconductor device in the absence of a plasma
专利标题（中）： 在不存在等离子体的情况下干法蚀刻半导体器件的方法
申请号： US10259256

申请日： 2002-09-27
公开(公告)号： US06730600B2

公开(公告)日： 2004-05-04
发明人: Nace Layadi , Simon John Molloy , Sailesh Mansinh Merchant , Isik C. Kizilyalli
申请人： Nace Layadi , Simon John Molloy , Sailesh Mansinh Merchant , Isik C. Kizilyalli
主分类号： H01L21465
IPC分类号： H01L21465

Method of dry etching a semiconductor device in the absence of a plasma

摘要：

A method for dry etching a material deposited on semiconductor device is performed by chemically reacting the material with an etchant gas. The etching process is conducted in a reaction chamber at a predetermined temperature and predetermined pressure within the reaction chamber and without the need of generating a plasma within the chamber or applying an electrical bias to the semiconductor device. A sufficient amount of gas is introduced into the reaction chamber to selectively remove the material from the semiconductor device.

摘要（中）：

通过使材料与蚀刻剂气体化学反应来进行用于干蚀刻沉积在半导体器件上的材料的方法。蚀刻工艺在反应室内以预定温度和预定压力在反应室内进行，而不需要在室内产生等离子体或向半导体器件施加电偏压。将足够量的气体引入反应室以选择性地从半导体器件中去除材料。

公开/授权文献

US20040063315A1 METHOD OF DRY ETCHING A SEMICONDUCTOR DEVICE IN THE ABSENCE OF A PLASMA 公开/授权日：2004-04-01

信息查询

Espacenet