发明授权
- 专利标题: Pressure sensor and process for producing the pressure sensor
- 专利标题(中): 压力传感器和制造压力传感器的过程
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申请号: US10301096申请日: 2002-11-20
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公开(公告)号: US06732590B1公开(公告)日: 2004-05-11
- 发明人: Alfred Gottlieb , Martin Schröder
- 申请人: Alfred Gottlieb , Martin Schröder
- 主分类号: G01L916
- IPC分类号: G01L916
摘要:
The invention relates to a pressure sensor with an MEM structure (micro electro mechanical structure), which has a hollow housing in which a semiconductor chip with a pressure-sensitive area is arranged. In its interior and with parts of the semiconductor chip, the housing is covered by a first plastic compound, which has a lower level of deformation than a second plastic compound, which partly covers the pressure-sensitive area of the semiconductor chip.
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