发明授权
US06732590B1 Pressure sensor and process for producing the pressure sensor 有权
压力传感器和制造压力传感器的过程

  • 专利标题: Pressure sensor and process for producing the pressure sensor
  • 专利标题(中): 压力传感器和制造压力传感器的过程
  • 申请号: US10301096
    申请日: 2002-11-20
  • 公开(公告)号: US06732590B1
    公开(公告)日: 2004-05-11
  • 发明人: Alfred GottliebMartin Schröder
  • 申请人: Alfred GottliebMartin Schröder
  • 主分类号: G01L916
  • IPC分类号: G01L916
Pressure sensor and process for producing the pressure sensor
摘要:
The invention relates to a pressure sensor with an MEM structure (micro electro mechanical structure), which has a hollow housing in which a semiconductor chip with a pressure-sensitive area is arranged. In its interior and with parts of the semiconductor chip, the housing is covered by a first plastic compound, which has a lower level of deformation than a second plastic compound, which partly covers the pressure-sensitive area of the semiconductor chip.
信息查询
0/0