发明授权
US06735103B2 System and method to avoid voltage read errors in open digit line array dynamic random access memories 有权
系统和方法,以避免开放数字线阵列动态随机存取存储器中的电压读取错误

  • 专利标题: System and method to avoid voltage read errors in open digit line array dynamic random access memories
  • 专利标题(中): 系统和方法,以避免开放数字线阵列动态随机存取存储器中的电压读取错误
  • 申请号: US10231680
    申请日: 2002-08-29
  • 公开(公告)号: US06735103B2
    公开(公告)日: 2004-05-11
  • 发明人: Howard C. Kirsch
  • 申请人: Howard C. Kirsch
  • 主分类号: G11C502
  • IPC分类号: G11C502
System and method to avoid voltage read errors in open digit line array dynamic random access memories
摘要:
Selective coupling devices directed by coupling controllers prevent cell plate and/or substrate disturbances from causing memory cell read and refresh errors in open digit line array memory devices. Using selective decoupling devices, when memory cells in an active row store an appreciably unbalanced number of either zeroes or ones, reading the cells generates a voltage transient in the cell plate and/or substrate that can be coupled to a reference digit line because the cell plates and/or substrates of the active sub-array are normally coupled to the cell plates and/or substrates of the reference arrays. By decoupling the cell plate and/or substrate of the active sub-array from the cell plates and/or substrates of the reference arrays, any coupling of the voltage transients to reference digit lines is reduced.
信息查询
0/0