发明授权
- 专利标题： Magneto-resistive memory cell structures with improved selectivity
- 专利标题（中）： 具有改善选择性的磁阻存储单元结构
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申请号： US10068465申请日： 2002-02-06
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公开(公告)号： US06735112B2公开(公告)日： 2004-05-11
- 发明人: Theodore Zhu , Yong Lu , Anthony Arrott
- 申请人： Theodore Zhu , Yong Lu , Anthony Arrott
- 主分类号： G11C1115
- IPC分类号： G11C1115
摘要：
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.