发明授权
- 专利标题: Silicon nitride sintered products and processes for their production
- 专利标题(中): 氮化硅烧结产品及其生产工艺
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申请号: US10260396申请日: 2002-10-01
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公开(公告)号: US06737378B2公开(公告)日: 2004-05-18
- 发明人: Naoto Hirosaki , Toshiyuki Nishimura , Yoshinobu Yamamoto , Mamoru Mitomo
- 申请人: Naoto Hirosaki , Toshiyuki Nishimura , Yoshinobu Yamamoto , Mamoru Mitomo
- 优先权: JP2000-258568 20000829; JP2000-324327 20001024
- 主分类号: C04B35587
- IPC分类号: C04B35587
摘要:
A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
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