发明授权
US06737687B2 Field-effect transistor device having a uniquely arranged gate electrode
失效
场效应晶体管器件具有唯一排列的栅电极
- 专利标题: Field-effect transistor device having a uniquely arranged gate electrode
- 专利标题(中): 场效应晶体管器件具有唯一排列的栅电极
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申请号: US10359204申请日: 2003-02-06
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公开(公告)号: US06737687B2公开(公告)日: 2004-05-18
- 发明人: Takahiro Baba , Koichi Sakamoto , Shigeyuki Mikami , Hiroyasu Matsuzaki
- 申请人: Takahiro Baba , Koichi Sakamoto , Shigeyuki Mikami , Hiroyasu Matsuzaki
- 优先权: JP2002-051733 20020227
- 主分类号: H01L2980
- IPC分类号: H01L2980
摘要:
A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.
公开/授权文献
- US20030160279A1 Field-effect transistor device 公开/授权日:2003-08-28