发明授权
US06738409B2 Current confinement, capacitance reduction and isolation of VCSELs using deep elemental traps
失效
使用深度元素阱的电流限制，电容降低和VCSEL的隔离
- 专利标题： Current confinement, capacitance reduction and isolation of VCSELs using deep elemental traps
- 专利标题（中）： 使用深度元素阱的电流限制，电容降低和VCSEL的隔离
-
申请号： US10028303申请日： 2001-12-28
-
公开(公告)号： US06738409B2公开(公告)日： 2004-05-18
- 发明人: Ralph H. Johnson
- 申请人： Ralph H. Johnson
- 主分类号： H01S5183
- IPC分类号： H01S5183
摘要：
A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate.