发明授权
- 专利标题： Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor
- 专利标题（中）： 场效应晶体管，电路结构和制造场效晶体管的方法
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申请号： US10352830申请日： 2003-01-28
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公开(公告)号： US06740910B2公开(公告)日： 2004-05-25
- 发明人: Wolfgang Roesner , Richard Johannes Luyken , Johannes Kretz
- 申请人： Wolfgang Roesner , Richard Johannes Luyken , Johannes Kretz
- 优先权： DE10036897 20000728
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.
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