发明授权
- 专利标题: Semiconductor device and method for testing semiconductor device
- 专利标题(中): 半导体器件和半导体器件测试方法
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申请号: US10320420申请日: 2002-12-17
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公开(公告)号: US06740929B2公开(公告)日: 2004-05-25
- 发明人: Makoto Koga , Kunihiko Gotoh , Kenichi Matsumaru , Mitsuya Kawata
- 申请人: Makoto Koga , Kunihiko Gotoh , Kenichi Matsumaru , Mitsuya Kawata
- 优先权: JP11-210803 19990726
- 主分类号: H01L2900
- IPC分类号: H01L2900
摘要:
A semiconductor device having at least three independently accessible memories, with at least one of the memories having a different memory capacity than the others. Separate selection signals are provided to the memories so that they can be independently activated. This allows the memories to be separately tested. When testing the semiconductor device, the memories are tested serially, except for the memory with the largest capacity, since this memory also has the longest test time. The memory with the longest test time is tested in parallel with the serially tested memories. This reduces the current that must be supplied by a test device to the semiconductor device during testing.
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