发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US10100090申请日： 2002-03-19
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公开(公告)号： US06740939B2公开(公告)日： 2004-05-25
- 发明人: Hirokazu Sayama , Yukio Nishida , Kazunobu Ohta , Hidekazu Oda
- 申请人： Hirokazu Sayama , Yukio Nishida , Kazunobu Ohta , Hidekazu Oda
- 优先权： JP2001-135356 20010502
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
CMOS transistors which can satisfy demand for size reduction and demand for reliability and a manufacturing method thereof are provided. A buried-channel type PMOS transistor is provided only in a CMOS transistor (100B) designed for high voltage; surface-channel type NMOS transistors are formed in a low-voltage NMOS region (LNR) and a high-voltage NMOS region (HNR), and a surface-channel type PMOS transistor is formed in a low-voltage PMOS region (LPR).
公开/授权文献
- US20020164858A1 Semiconductor device and manufacturing method thereof 公开/授权日：2002-11-07
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