Invention Grant
US06743368B2 Nano-size imprinting stamp using spacer technique 有权
使用间隔技术的纳米尺寸印记邮票

  • Patent Title: Nano-size imprinting stamp using spacer technique
  • Patent Title (中): 使用间隔技术的纳米尺寸印记邮票
  • Application No.: US10062952
    Application Date: 2002-01-31
  • Publication No.: US06743368B2
    Publication Date: 2004-06-01
  • Inventor: Heon Lee
  • Applicant: Heon Lee
  • Main IPC: B32B300
  • IPC: B32B300
Nano-size imprinting stamp using spacer technique
Abstract:
A wide-area nano-size imprinting stamp is disclosed. The wide-area nano-size imprinting stamp includes a substrate having a base surface upon which is formed a plurality of micro-features. Each micro-feature includes a plurality of spacers disposed on opposed side surfaces thereof. The spacers extend laterally outward of the opposed side surfaces and the micro-features and the spacers extend outward of the base surface. The micro-features and the spacers are selectively etched to differing heights to define an imprint stamp having an imprint profile. The imprint stamps can be formed on substantially all of a useable area of the substrate and can have complex shapes that vary among the imprint stamps. The imprint stamps can be used as a template for transferring the imprint profile to a mask layer in which the imprint profile will be replicated.
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