- 专利标题： Circuit and method for reading a toggle memory cell
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申请号： US10184811申请日： 2002-06-28
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公开(公告)号： US06744663B2公开(公告)日： 2004-06-01
- 发明人: Brad J. Garni , Thomas W. Andre , Joseph J. Nahas , Chitra K. Subramanian
- 申请人： Brad J. Garni , Thomas W. Andre , Joseph J. Nahas , Chitra K. Subramanian
- 主分类号： G11C1115
- IPC分类号： G11C1115
摘要：
A MRAM toggle type memory cell is read by first providing a first signal representative of the initial state to a sense amplifier (1300, 1500). A resistance of the cell is temporarily changed by altering a magnetic polarization of the free layer of the cell. A second signal responsive to altering the resistance of the MRAM cell is provided to the sense amplifier (1300, 1500). The first signal is compared to the second signal to determine the state of the MRAM cell.
公开/授权文献
- US20040008536A1 Circuit and method for reading a toggle memory cell 公开/授权日：2004-01-15