发明授权
US06746921B2 Method of forming an array of FLASH field effect transistors and circuitry peripheral to such array
有权
形成FLASH场效应晶体管阵列和这种阵列外围电路的方法
- 专利标题： Method of forming an array of FLASH field effect transistors and circuitry peripheral to such array
- 专利标题（中）： 形成FLASH场效应晶体管阵列和这种阵列外围电路的方法
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申请号： US10179893申请日： 2002-06-24
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公开(公告)号： US06746921B2公开(公告)日： 2004-06-08
- 发明人: Roger W Lindsay , Mark A. Helm
- 申请人： Roger W Lindsay , Mark A. Helm
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
Thermal oxidation of a peripheral area of a semiconductor substrate is globally restricted with an overlying oxidation resistant layer that is not globally received within the array during formation of a sacrificial oxide layer prior to forming any transistor gate dielectric layer within the array. At least some FLASH field effect transistor gates having floating gate dielectric of a first thickness are formed within the array and at least some non-FLASH field effect transistor gates having gate dielectric of a second thickness are formed within the periphery, with the first and second thicknesses being different. Other aspects and implementations are disclosed.