Invention Grant
US06747300B2 H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
有权
H桥驱动器在公共绝缘外壳中使用一对高低侧MOSFET
- Patent Title: H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
- Patent Title (中): H桥驱动器在公共绝缘外壳中使用一对高低侧MOSFET
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Application No.: US10091194Application Date: 2002-03-04
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Publication No.: US06747300B2Publication Date: 2004-06-08
- Inventor: Bruno C. Nadd , Vincent Thiery , Xavier de Frutos , Chik Yam Lee
- Applicant: Bruno C. Nadd , Vincent Thiery , Xavier de Frutos , Chik Yam Lee
- Main IPC: H01L2976
- IPC: H01L2976

Abstract:
A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.
Public/Granted literature
- US20030164545A1 H-bridge with single lead frame Public/Granted day:2003-09-04
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