Invention Grant
US06749488B2 Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
有权
用于在半导体晶片上抛光导电层和非导电层的化学机械抛光浆料组合物
- Patent Title: Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
- Patent Title (中): 用于在半导体晶片上抛光导电层和非导电层的化学机械抛光浆料组合物
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Application No.: US10268254Application Date: 2002-10-09
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Publication No.: US06749488B2Publication Date: 2004-06-15
- Inventor: Anthony Mark Pasqualoni , Deepak Mahulikar , Larry A. LaFollette , Richard J. Jenkins
- Applicant: Anthony Mark Pasqualoni , Deepak Mahulikar , Larry A. LaFollette , Richard J. Jenkins
- Main IPC: B24B100
- IPC: B24B100
Abstract:
The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
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