A method of forming a bitline and a bitline contact and a dynamic random access memory (DRAM) cell array includes the following steps. The bitline and the bitline contact are formed in a two-step process, in which, first, the bitline contact is formed in a first dielectric layer and, then, the bitline of a conductive material having a lower resistivity than the bitline contact material is defined in a second dielectric layer (5). According to a preferred embodiment, the second dielectric layer (5) is made of a low k dielectric. The retention anneal process, which is usually performed in the standard DRAM process, is preferably made before depositing the bitline material and, optionally, the low k dielectric. A dynamic random access memory cell array having at least one bitline and a bitline contact can be manufactured by this method.