Alignment-mark patterns are disclosed that are defined on stencil reticles and that can be transferred lithographically from the reticle to a sensitized substrate using charged-particle-beam microlithography. The corresponding alignment marks as transferred to the substrate are detectable at high accuracy using an optical-based alignment-detection device (e.g., an FIA-based device). The transferred alignment marks can be used in place of alignment marks used in optical microlithography systems. An alignment-mark pattern as defined on a stencil reticle includes pattern elements that are split in any of various ways into respective pattern-element portions separated from each other on the membrane of the stencil reticle by “girders” (band-like membrane portions) that prevent the formation of islands in the stencil reticle and that prevent deformation of the pattern elements on the stencil reticle.