发明授权
- 专利标题： Semiconducting devices and method of making thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US09852999申请日： 2001-05-10
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公开(公告)号： US06750474B1公开(公告)日： 2004-06-15
- 发明人: Hans Meiling , Rudolf Emmanuel Isidor Schropp
- 申请人： Hans Meiling , Rudolf Emmanuel Isidor Schropp
- 优先权： NL1004886 19961223
- 主分类号： H01L2904
- IPC分类号： H01L2904
摘要：
The invention relates to a process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, disassociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.
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