发明授权
- 专利标题: Non-volatile semiconductor memory device and information apparatus
- 专利标题(中): 非易失性半导体存储器件和信息装置
-
申请号: US10187048申请日: 2002-06-28
-
公开(公告)号: US06751153B2公开(公告)日: 2004-06-15
- 发明人: Yasumichi Mori , Ken Sumitani , Yuji Tanaka , Haruyasu Fukui
- 申请人: Yasumichi Mori , Ken Sumitani , Yuji Tanaka , Haruyasu Fukui
- 优先权: JP2001-197535 20010628
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A non-volatile semiconductor memory device, comprises a plurality of memory banks each including a plurality of memory cells, a command recognition section for identifying an externally input command signal and outputting an identification signal, an internal control section for generating a control signal for executing a command designated by the identification signal, an address control section for generating an internal address signal to a memory region including an arbitrary combination of the plurality of memory banks to be accessed, based on the externally input address signal, and a first address inversion section for inverting or non-inverting the logical values of at least a specific bit of the input address signal and outputting the resultant input address signal to the address control section. Predetermined memory cells are accessed based on the control signal and the internal address signal.