发明授权
- 专利标题： Stencil mask for high- and ultrahigh-energy implantation
- 专利标题（中）： 用于高能量和超高能量注入的模板掩模
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申请号： US10135474申请日： 2002-04-30
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公开(公告)号： US06756162B2公开(公告)日： 2004-06-29
- 发明人: Michael Rueb
- 申请人： Michael Rueb
- 优先权： DE10121181 20010430
- 主分类号： G03F900
- IPC分类号： G03F900
摘要：
A stencil mask for high- and ultrahigh-energy implantation of semiconductor wafers has a substrate with implantation openings through which the implantation energy can be projected onto a wafer that will be implanted. The critical dimension of the implantation openings is defined in a manner dependent on the respective implantation energy.
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