发明授权
US06756806B1 Method of determining location of gate oxide breakdown of MOSFET by measuring currents
有权
通过测量电流确定MOSFET栅极氧化物击穿位置的方法
- 专利标题： Method of determining location of gate oxide breakdown of MOSFET by measuring currents
- 专利标题（中）： 通过测量电流确定MOSFET栅极氧化物击穿位置的方法
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申请号： US10113017申请日： 2002-03-28
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公开(公告)号： US06756806B1公开(公告)日： 2004-06-29
- 发明人: Nian Yang , Zhigang Wang , Tien-Chun Yang
- 申请人： Nian Yang , Zhigang Wang , Tien-Chun Yang
- 主分类号： G01R3106
- IPC分类号： G01R3106
摘要：
A method of determining the location of the breakdown in the gate oxide of a MOSFET is disclosed. Additionally, the method determines the location of the breakdown in a manner that is convenient to use and can be easily employed. The method will determine whether there is a breakdown in the gate oxide. If there is a breakdown, the method will enable determination of the location of the breakdown in the gate oxide.
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