Invention Grant
- Patent Title: Semiconductor optical modulator and semiconductor optical device
- Patent Title (中): 半导体光调制器和半导体光器件
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Application No.: US10464450Application Date: 2003-06-19
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Publication No.: US06760141B2Publication Date: 2004-07-06
- Inventor: Kazuhisa Takagi
- Applicant: Kazuhisa Takagi
- Main IPC: G02F1035
- IPC: G02F1035

Abstract:
An electroabsorption semiconductor optical modulator includes a light absorption layer for generating a modulated light beam by absorbing an incident light beam. A well layer in the light absorption layer, accumulates charge carriers generated by the light absorption layer. The charge carriers are guided and released from the well layer upon receipt of an incident excitation light beam having a wavelength corresponding to the bandgap energy of the well layer. The incident light beam is modulated by changes in absorption coefficient in response to an externally applied voltage. The modulator responds to a high-intensity incident light beam at high frequency, free from deterioration of extinction characteristics, and has good transmission characteristics.
Public/Granted literature
- US20040001243A1 Semiconductor optical modulator and semiconductor optical device Public/Granted day:2004-01-01
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