Semiconductor device with boron containing carbon doped silicon oxide layer

发明授权

US06762435B2 Semiconductor device with boron containing carbon doped silicon oxide layer 有权

标题翻译：具有含硼碳掺杂氧化硅层的半导体器件

请登陆查看更多内容

专利标题： Semiconductor device with boron containing carbon doped silicon oxide layer
专利标题（中）： 具有含硼碳掺杂氧化硅层的半导体器件
申请号： US10458003

申请日： 2003-06-09
公开(公告)号： US06762435B2

公开(公告)日： 2004-07-13
发明人: Steven N. Towle
申请人： Steven N. Towle
主分类号： H01L31256
IPC分类号： H01L31256

Semiconductor device with boron containing carbon doped silicon oxide layer

摘要：

A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.

摘要（中）：

描述了在基板上形成碳掺杂氧化物层的方法。该方法包括向化学气相沉积设备中引入碳源，硅，硼和氧源。然后在使基底上形成含硼的碳掺杂氧化物层的条件下运行该装置。

公开/授权文献

US20030211325A1 Method of forming a carbon doped oxide layer on a substrate 公开/授权日：2003-11-13

信息查询

Espacenet