An apparatus for growing a crystal, using the cooler 10 surrounding the single crystal 8 for high speed pulling. The cooler 10 is prepared using a copper-based metal and is water cooled. The supporting arm 12 that supports the cooler 10 is prepared using stainless steel or the like, which is higher in mechanical strength than copper-based metals and is inferior in thermal conductivity, and is detachably connected to the cooler 10. Excessive cooling of the supporting arm 12 and disposition due to precipitation of silicon oxide are prevented, leading to improvement in disposition free pulling rate without the prevention of speed-up. The cost of manufacture of the cooler 10 is saved. The support strength of the cooler is improved.