发明授权
- 专利标题： Passivation of nitride spacer
- 专利标题（中）： 氮化物间隔物钝化
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申请号： US09919943申请日： 2001-08-02
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公开(公告)号： US06764912B1公开(公告)日： 2004-07-20
- 发明人: John Clayton Foster , Eric N. Paton , Matthew S. Buynoski , Qi Xiang , Paul R. Besser , Paul L. King
- 申请人： John Clayton Foster , Eric N. Paton , Matthew S. Buynoski , Qi Xiang , Paul R. Besser , Paul L. King
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
The formation of metal silicides in silicon nitride spacers on a gate electrode causes bridging between a gate electrode and the source and drain regions of a semiconductor device. The bridging is prevented by forming a thin layer of silicon oxide on the silicon nitride spacers prior to forming the metal silicide layers on the device.
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