发明授权
- 专利标题: Method for improving the coating capability of low-k dielectric layer
- 专利标题(中): 提高低k介电层涂层能力的方法
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申请号: US09931016申请日: 2001-08-17
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公开(公告)号: US06764965B2公开(公告)日: 2004-07-20
- 发明人: Tsung-Tang Hsieh , Cheng-Yuan Tsai , Chih-An Huang
- 申请人: Tsung-Tang Hsieh , Cheng-Yuan Tsai , Chih-An Huang
- 主分类号: H01L2131
- IPC分类号: H01L2131
摘要:
A method for improving the coating capability of low dielectric layer is disclosed. The method includes steps of an etching stop layer is deposited a semiconductor substrate, an adhesion promoter layer is spun-on the etching stop layer. The pre-wetting process being performed on the adhesion promoter layer to enhance the coating capability of the low-k dielectric layer, and thus improve the coating quality through the pre-wetting process of baked adhesion promoter layer before the low-k dielectric layer is applied.