发明授权
- 专利标题: Bulk single crystal gallium nitride and method of making same
- 专利标题(中): 散装单晶氮化镓及其制造方法
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申请号: US09933943申请日: 2001-08-21
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公开(公告)号: US06765240B2公开(公告)日: 2004-07-20
- 发明人: Michael A. Tischler , Thomas F. Kuech , Robert P. Vaudo
- 申请人: Michael A. Tischler , Thomas F. Kuech , Robert P. Vaudo
- 主分类号: H01L310328
- IPC分类号: H01L310328
摘要:
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.