发明授权
- 专利标题: Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
- 专利标题(中): 能够控制边缘域的位置和大小以及矫顽力和磁记忆的磁阻元件
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申请号: US10391423申请日: 2003-03-19
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公开(公告)号: US06765824B2公开(公告)日: 2004-07-20
- 发明人: Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama , Tomomasa Ueda
- 申请人: Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama , Tomomasa Ueda
- 优先权: JP2002-097759 20020329
- 主分类号: G11C1115
- IPC分类号: G11C1115
摘要:
There is provided a magnetoresistance element in which a shape of a free ferromagnetic layer includes a first portion with a parallelogrammic contour, and second portions that protrude from a pair of opposite corners of the first portion respectively in a main direction parallel to a pair of opposite sides of the first portion, the shape is asymmetric with respect to a line that passes through a center of the first portion and is parallel to the main direction, and an axis of easy magnetization of the free ferromagnetic layer falls within a range defined by an acute angle that a first direction makes with a second direction, the first direction being substantially parallel to the main direction and the second direction being substantially parallel to the longest line segment that joins contours of the second portions.
公开/授权文献
- US20030185050A1 Magnetoresistance element and magnetic memory 公开/授权日:2003-10-02
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