发明授权
- 专利标题: Crystal growth method
- 专利标题(中): 晶体生长法
-
申请号: US10130671申请日: 2002-09-24
-
公开(公告)号: US06767400B2公开(公告)日: 2004-07-27
- 发明人: Takayuki Kubo , Fumio Kawahigashi , Hiroshi Asano , Shinichiro Miki , Manabu Nishimoto
- 申请人: Takayuki Kubo , Fumio Kawahigashi , Hiroshi Asano , Shinichiro Miki , Manabu Nishimoto
- 主分类号: C30B1520
- IPC分类号: C30B1520
摘要:
In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.
公开/授权文献
- US20030150373A1 Crystal growth method 公开/授权日:2003-08-14