发明授权
- 专利标题： Low dose super deep source/drain implant
- 专利标题（中）： 低剂量超深源/漏植入
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申请号： US10230809申请日： 2002-08-29
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公开(公告)号： US06767778B2公开(公告)日： 2004-07-27
- 发明人: Zhongze Wang , Inna V. Patrick
- 申请人： Zhongze Wang , Inna V. Patrick
- 主分类号： H01L218234
- IPC分类号： H01L218234
摘要：
A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
公开/授权文献
- US20040041170A1 Low dose super deep source/drain implant 公开/授权日：2004-03-04
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