发明授权
- 专利标题： Process for integrating alignment mark and trench device
- 专利标题（中）： 集成对准标记和沟槽器件的过程
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申请号： US10628952申请日： 2003-07-28
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公开(公告)号： US06767800B1公开(公告)日： 2004-07-27
- 发明人: Tzu-Ching Tsai , Liang-Hsin Chen
- 申请人： Tzu-Ching Tsai , Liang-Hsin Chen
- 优先权： TW92106068A 20030319
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A process for integrating an alignment mark and a trench device. A substrate having first and second trenches is provided. The second trench is used as the alignment mark having a width larger than the first trench. The trench device is formed in each of the low portion of the first and second trenches, and then a first conductive layer is formed on the trench device in each of the first and second trenches. A second conductive layer is formed overlying the substrate and fills in the first trench and is simultaneously and conformably formed over the inner surface of the second trench. The second conductive layer and a portion of the first conductive layer in the second trench are removed and simultaneously leave a portion of the second conductive layer in the first trench by the etch back process.
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