发明授权
US06768335B1 Integrated circuit multiplexer including transistors of more than one oxide thickness
有权
集成电路多路复用器包括多于一个氧化物厚度的晶体管
- 专利标题: Integrated circuit multiplexer including transistors of more than one oxide thickness
- 专利标题(中): 集成电路多路复用器包括多于一个氧化物厚度的晶体管
-
申请号: US10354520申请日: 2003-01-30
-
公开(公告)号: US06768335B1公开(公告)日: 2004-07-27
- 发明人: Steven P. Young , Michael J. Hart , Venu M. Kondapalli , Martin L. Voogel
- 申请人: Steven P. Young , Michael J. Hart , Venu M. Kondapalli , Martin L. Voogel
- 主分类号: G06F738
- IPC分类号: G06F738
摘要:
A multiplexer that can be used, for example, in a programmable logic device (PLD). The multiplexer includes a plurality of pass transistors passing a selected one of several input values to an internal node, which drives a buffer that provides the multiplexer output signal. The pass transistors can be controlled, for example, by values stored in memory cells of a PLD. The pass transistors have a first oxide thickness and are controlled by a value having a first operating voltage. The buffer includes transistors having a second and thinner oxide thickness, and is operated at a second and lower operating voltage. Where memory cells are used to control the pass transistors, the memory cells include transistors having the first oxide thickness and operate at the first operating voltage. Some embodiments also include transistors of varying gate length for each of the pass transistors, buffer transistors, and memory cell transistors.
信息查询