Invention Grant
- Patent Title: Semiconductor power amplifier and multistage monolithic integrated circuit
- Patent Title (中): 半导体功率放大器和多级单片集成电路
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Application No.: US09817216Application Date: 2001-03-27
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Publication No.: US06768381B2Publication Date: 2004-07-27
- Inventor: Yasuhiko Kuriyama
- Applicant: Yasuhiko Kuriyama
- Priority: JP2000-086157 20000327
- Main IPC: H03F368
- IPC: H03F368

Abstract:
There are disclosed a semiconductor power amplifier and a microwave monolithic integrated circuit which can be reduced in size and cost and which can sufficiently inhibit loop oscillation. The semiconductor power amplifier of the present invention comprises first and second transistors connected in parallel, a capacitor element connected between a signal input terminal and a base terminal of the first transistor, a capacitor element connected between the signal input terminal and a base terminal of the second transistor, and a resistance element connected between the respective base terminals of the first and second transistors. Since the capacitor element and resistance element are disposed, a loop oscillation signal can sufficiently be attenuated on a loop oscillation path. Moreover, in the present embodiment, since miniaturization is possible, MMIC can easily be constituted.
Public/Granted literature
- US20010024141A1 Semiconductor power amplifier and multistage monolithic integrated circuit Public/Granted day:2001-09-27
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