- 专利标题: Low silicon-outgassing resist for bilayer lithography
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申请号: US10241937申请日: 2002-09-11
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公开(公告)号: US06770419B2公开(公告)日: 2004-08-03
- 发明人: Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
- 申请人: Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
- 主分类号: G03C173
- IPC分类号: G03C173
摘要:
The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
公开/授权文献
- US20040048187A1 Low silicon-outgassing resist for bilayer lithography 公开/授权日:2004-03-11