Devices, structures, and methods for enhancing devices using dual-doped polycrystalline silicon are discussed. One aspect of the present invention includes a p-type strip having a top, a bottom, two sides, and two ends; an n-type strip having a top, a bottom, two sides, and two ends; and a conductive inhibitor strip that adjoins a portion of one of the two sides of the p-type strip and a portion of one of the two sides of the n-type strip so as to inhibit cross-diffusion between the p-type strip and the n-type strip while electrical connection between n-type and p-type polycrystalline silicon is maintained.