发明授权
US06771150B2 Mounting structure of high frequency semiconductor apparatus and its production method 失效
高频半导体装置的安装结构及其制作方法

  • 专利标题: Mounting structure of high frequency semiconductor apparatus and its production method
  • 专利标题(中): 高频半导体装置的安装结构及其制作方法
  • 申请号: US10245724
    申请日: 2002-09-18
  • 公开(公告)号: US06771150B2
    公开(公告)日: 2004-08-03
  • 发明人: Yoshiyuki Sasada
  • 申请人: Yoshiyuki Sasada
  • 优先权: JP2002-001296 20020108
  • 主分类号: H01P710
  • IPC分类号: H01P710
Mounting structure of high frequency semiconductor apparatus and its production method
摘要:
In a high-frequency circuit having a substrate having a high-frequency transmission line and an dielectric resonator formed on said substrate so that said dielectric resonator and said high-frequency transmission line may be coupled electro-magnetically to each other, a hole part or a cavity part is formed at a part of said substrate and a dielectric resonator is embedded in said hole part or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator is produced by the step for forming a high-frequency transmission line on a substrate, the step for forming a hole part or a cavity part on a part of the substrate, and the step for mounting a dielectric resonator in the hole par formed on the surface of the substrate.
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