发明授权
- 专利标题: Method for manufacturing an active matrix substrate
- 专利标题(中): 有源矩阵基板的制造方法
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申请号: US09572383申请日: 2000-05-16
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公开(公告)号: US06771239B1公开(公告)日: 2004-08-03
- 发明人: Kenji Uchiyama
- 申请人: Kenji Uchiyama
- 优先权: JP11-136051 19990517; JP11-148010 19990527
- 主分类号: G09G336
- IPC分类号: G09G336
摘要:
In a liquid crystal device, spherical-shaped semiconductor devices are mounted in a dispersive fashion on a wiring pattern extending toward a liquid crystal sealing region from input terminals connected to a flexible board. Each spherical-shaped semiconductor device is produced by forming a semiconductor device element on the surface of a spherical-shaped semiconductor material. In production of an electro-optical panel, MIS transistors are first produced in the form of spherical-shaped semiconductor devices, and then one spherical-shaped semiconductor device is installed in each pixel on an active matrix substrate, thereby allowing the MIS transistors to be produced at an optimum temperature without restriction caused by heat resistance of the substrate. When the active matrix substrate is adhesively bonded to an opposite substrate, the spherical-shaped semiconductor devices serve as spacers which allow the substrates to be precisely spaced a desired distance apart from each other.