发明授权
- 专利标题: Thermally-assisted magnetic writing using an oxide layer and current-induced heating
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申请号: US10295678申请日: 2002-11-15
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公开(公告)号: US06771534B2公开(公告)日: 2004-08-03
- 发明人: Barry C. Stipe
- 申请人: Barry C. Stipe
- 主分类号: G11C1100
- IPC分类号: G11C1100
摘要:
A method and structure for a non-volatile magnetic random access memory (MRAM) device that has a stable magnetic electrode, an oxide layer adjacent the stable magnetic electrode, and a free magnetic electrode. The oxide layer is between the stable magnetic electrode and the free magnetic electrode. In the invention, a conductor is connected to a stable magnetic electrode. The oxide layer has a resistance at levels to allow sufficient power dissipation to lower the anisotropy of the free magnetic electrode through current induced heating. Current-induced heating is used in combination with spin-transfer torque or a magnetic field to switch the free magnetic electrode.