发明授权
- 专利标题： Chemical vapor deposition method and related material
- 专利标题（中）： 化学气相沉积法及相关材料
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申请号： US10422983申请日： 2003-04-25
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公开(公告)号： US06773750B2公开(公告)日： 2004-08-10
- 发明人: Hiroshi Funakubo , Yasushi Murakami , Hideaki Machida
- 申请人： Hiroshi Funakubo , Yasushi Murakami , Hideaki Machida
- 优先权： JP2000-265521 20000901
- 主分类号： C23C1600
- IPC分类号： C23C1600
摘要：
A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.
公开/授权文献
- US20030203112A1 Chemical vapor deposition method and related material 公开/授权日：2003-10-30