发明授权
- 专利标题： Metal stack for local interconnect layer
- 专利标题（中）： 用于本地互连层的金属堆叠
-
申请号： US10287258申请日： 2002-11-04
-
公开(公告)号： US06774033B1公开(公告)日： 2004-08-10
- 发明人: Mira Ben-Tzur , Dafna Beery , Gorley L. Lau , Krishnaswamy Ramkumar
- 申请人： Mira Ben-Tzur , Dafna Beery , Gorley L. Lau , Krishnaswamy Ramkumar
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
In one embodiment, a local interconnect layer in an integrated circuit is formed by depositing a first film over an oxide layer and depositing a second film over the first film. The first film may comprise titanium nitride, while the second film may comprise tungsten, for example. The first film and the second film may be deposited in-situ by sputtering. The second film may be etched using the first film as an etch stop, and the first film may be etched using the oxide layer as an etch stop.
信息查询
