发明授权
US06774695B2 Level shift circuit and semiconductor integrated circuit 失效
电平移位电路和半导体集成电路

  • 专利标题: Level shift circuit and semiconductor integrated circuit
  • 专利标题(中): 电平移位电路和半导体集成电路
  • 申请号: US09976052
    申请日: 2001-10-15
  • 公开(公告)号: US06774695B2
    公开(公告)日: 2004-08-10
  • 发明人: Hirokatsu HayashiToshiro Takahashi
  • 申请人: Hirokatsu HayashiToshiro Takahashi
  • 优先权: JP2000-330385 20001030
  • 主分类号: H03K19185
  • IPC分类号: H03K19185
Level shift circuit and semiconductor integrated circuit
摘要:
A level conversion circuit is composed of a level shift circuit for supplying a level-converted signal in the same phase as the input signal and a signal in the reverse phase thereto and a follow-up circuit responsive to the earlier of the output signals of the level shift circuit for generating an output signal, wherein the follow-up circuit consists of an inverter circuit in which two p-channel type MOS transistors and two n-channel type MOS transistors are connected in series between a first voltage terminal and a second voltage terminal, of which one pair is used as input transistors and the remaining pair of transistors are subjected to feedback based on the output signal of the level shift circuit to be quickly responsive to the next variation.
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